Research Article

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

Figure 3

(a) characteristics of ZnO:YAG-based MIS LED with SiO2 insulator layer of varying thickness. (b) characteristics of ZnO:YAG-based MIS LED with different insulator layers with a thickness of 200 nm.
959620.fig.003a
(a)
959620.fig.003b
(b)