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International Journal of Photoenergy
Volume 2015, Article ID 154574, 6 pages
http://dx.doi.org/10.1155/2015/154574
Research Article

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron-Boron Related Complexes in Silicon

1State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2Department of Solid State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Ghent, Belgium

Received 24 April 2015; Accepted 28 June 2015

Academic Editor: Yanfa Yan

Copyright © 2015 Xiaodong Zhu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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