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International Journal of Photoenergy
Volume 2015, Article ID 213858, 10 pages
Research Article

Sb2S3 Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

1Department of Mechanical Engineering, National Chung-Hsing University, Taichung 40227, Taiwan
2Department of Physics, National Chung-Hsing University, Taichung 40227, Taiwan
3Graduate Institute of Biomedical Engineering, National Chung-Hsing University, Taichung 40227, Taiwan

Received 31 December 2014; Revised 11 March 2015; Accepted 11 March 2015

Academic Editor: Leonardo Palmisano

Copyright © 2015 You-Da Hsieh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3 quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3 deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.