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International Journal of Photoenergy
Volume 2015 (2015), Article ID 273615, 8 pages
Research Article

Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell

1Department of Materials Science and Engineering, Dayeh University, Changhua 515, Taiwan
2Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
3School of Software and Microelectronics, Peking University, Beijing 100871, China
4Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
5Department of Materials Science and Engineering, MingDao University, Changhua 52354, Taiwan

Received 25 July 2014; Revised 22 October 2014; Accepted 23 November 2014

Academic Editor: Harald Hoppe

Copyright © 2015 Shui-Yang Lien et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Different etching times are used to etch silicon wafers. Effects of surface morphology on wafer minority carrier lifetime, passivation quality, and heterojunction solar cell (HJ) performance are investigated. The numbers of mountains and valleys, defined as turning points, on wafer surfaces are used to explain the minority carrier lifetime variations. For a wafer with a smaller amount of turning points, hydrogenated amorphous silicon (a-Si:H) passivation quality can be comparable to ideal iodine-ethanol solution passivation. If the wafer has a notable amount of turning points, the carrier lifetime decreases as the a-Si:H layer will not be able to be well-deposited on turning points. Furthermore, the PC1D simulation indicates that an optimal device conversion efficiency of 21.94% can be achieved at an etching time of 60 min, where a best combination of short-circuit current and open-circuit voltage is obtained.