Research Article
Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell
Table 1
Simulation parameters for HJ silicon solar cells.
| | Device parameter | Value |
| | Device area (cm2) | 1 | | Emitter contact resistance () | 6 × 10−3 | | Base contact resistance () | 5 × 10−3 | | Internal conductance (S) | 3 × 10−3 | | Device structure | n-Si/i-Si/c-Si/Al-BSF | | Rear reflectance (%) | 90 | | Light source | One sun (AM 1.5 G, 100 mW/cm2, 25°C) |
| | Layer parameter | a-Si:H (n) | a-Si:H (i) | c-Si (p) | Al-BSF |
| | Thickness (m) | 0.01 | 0.005 | 250 | 5 | | Band gap (eV) | 1.92 | 1.7 | 1.12 | 1.12 | | Dielectric constant | 11.9 | 11.9 | 11.9 | 11.7 | | Doping concentration (cm−3) | 1 × 1019 | — | 1 × 1016 | 1 × 1019 |
| | Etching time (min) | 0 | 30 | 60 | 90 | 120 |
| | *Wafer effective lifetime (s) | 133.81 | 307.45 | 300.12 | 95.81 | 187.16 | | *Wafer front reflectance (%) | 38.67 | 22.67 | 12.66 | 11.06 | 14.69 | | *Device front reflectance with ITO (%) | 13.36 | 4.95 | 2.60 | 2.71 | 3.02 |
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Measured from experimental data.
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