Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

Table 3

Resistivity, Hall coefficient, conductivity type, carrier density, and Hall mobility of PbS:Hg thin film using Hall effect measurement system. The measurement conducted at room temperature under applied field was adjusted from 1 to 5 kG.

Sample	Field; Gs	Resistivity; ohm·cm	Hall coefficient; cm^3/C	Type	Carrier density; 1/cm^3	Hall mobility; cm^2/(V·s)
TiO2	3000	−3.6201 × 10^2	−2.34155 × 10^6	n	2.6692 × 10^12	6.4682 × 10^3
TiO2/PbS	3000	−7.4174 × 10^2	1.56716 × 10^6	p	3.9881 × 10^12	2.1128 × 10^3
TiO2/PbS:Bi	3000	6.3436 × 10^4	−8.08514 × 10^3	n	7.7302 × 10^14	1.2745 × 10^1
TiO2/PbS:Ag	3000	1.5702 × 10^5	4.73004 × 10^3	P	1.3213 × 10^15	3.0123 × 10^2