Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

Table 1

Data concerning the ITO films annealing before and after annealing.

Samples	Parameters
	Carrier concentration; (cm^−3)	Mobility; (cm^2/Vs)	Resistivity; (Ohm-cm)	Transmission; (400–1200 nm); (%)	Transmission; (400–800 nm); (%)	Transmission; (800–1200 nm); (%)
As-grown	−3.73E + 20	2.29E + 01	7.32E − 04	79.04	77.14	80.96
After annealing (100°C)	−3.61E + 20	2.38E + 01	7.27E − 04	79.38	77.81	80.96
After annealing (200°C)	−5.55E + 20	2.26E + 01	4.99E − 04	75.39	83.79	67.01
After annealing (300°C)	−5.93E + 20	2.48E + 01	4.25E − 04	85.11	87.84	82.37
After annealing (400°C)	−1.63E + 20	2.71E + 01	1.42E − 03	91.97	89.16	94.77