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International Journal of Photoenergy
Volume 2015, Article ID 515767, 7 pages
Research Article

Measurements and Simulations on the Mechanisms of Efficiency Losses in HIT Solar Cells

1DIMES, Università della Calabria, Via P. Bucci, 87036 Rende, Italy
2CNR-IMM, Strada VIII 5, 95121 Catania, Italy
3STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy
43SUN S.r.l., Contrada Blocco Torrazze, sn, 95121 Catania, Italy

Received 1 October 2014; Revised 17 February 2015; Accepted 18 February 2015

Academic Editor: Olindo Isabella

Copyright © 2015 Silvio Pierro et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We study the electrical and the optical behavior of HIT solar cell by means of measurements and optoelectrical simulations by TCAD simulations. We compare the HIT solar cell with a conventional crystalline silicon solar cell to identify the strengths and weaknesses of the HIT technology. Results highlight different mechanisms of electrical and optical efficiency losses caused by the presence of the amorphous silicon layer. The higher resistivity of the a-Si layers implies a smaller distance between the metal lines that causes a higher shadowing. The worst optical coupling between the amorphous silicon and the antireflective coating implies a slight increase of reflectivity around the 600 nm wavelength.