Measurements and Simulations on the Mechanisms of Efficiency Losses in HIT Solar Cells

Table 1

Measurements of electrical and geometrical parameters for HIT and c-Si structures.

	Unit	HIT	c-Si
Sheet resistance	Ω/sq	14	7.78
AZO thickness	nm	91	88
Emitter thickness	nm	—	50
Emitter doping	cm^−3	—	1 × 10^20
n-type a-Si:H thickness	nm	10	—
n-type a-Si:H doping	cm^−3	1 × 10^18	—
i-type a-Si:H thickness	nm	5	—
Emitter/AZO SRV	cm/s	8.7 × 10^4	2.1 × 10^4
i/n a-Si SRV	cm/s	—	10^2
Electrical measurements
Voc	V	0.563	0.552
Isc	mA/cm^2	25.0	30.5
FF	—	0.527	0.579
Efficiency	%	7.4	9.7