Research Article
Measurements and Simulations on the Mechanisms of Efficiency Losses in HIT Solar Cells
Table 2
Main physical parameters for the a-Si material for simulation.
| | Name | Unit | Value |
| | Electron affinity | eV | 3.9 | | Bandgap | eV | 1.74 | | Electron mobility | cm2V−1s−1 | 20 | | Hole mobility | cm2V−1s−1 | 2 | | DOS in CB | cm−3 | 2.5 × 1020 | | DOS in VB | cm−3 | 2.5 × 1020 |
| | Conduction band tail | | Traps concentration | cm−3 | 1 × 1018 | | Standard deviation | — | 0.08 | | Capture cross section for e− | cm−2 | 1 × 10−16 |
| | Valence band tail | | Traps concentration | cm−3 | 1 × 1018 | | Standard deviation | — | 0.08 | | Capture cross section for e− | cm−2 | 1 × 10−19 |
| | Mid gap | | Traps concentration | cm−3 | 1 × 1016 | | Standard deviation | — | 0.15 | | Capture cross section | cm−2 | 1 × 10−16 |
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