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International Journal of Photoenergy
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International Journal of Photoenergy
/
2015
/
Article
/
Tab 1
/
Research Article
Design and Simulation of InGaN
-
Junction Solar Cell
Table 1
Nitride low field mobility model parameter values [
18
].
Material
(cm
2
/V⋅s)
(cm
2
/V⋅s)
InN
3138.4
774
In
0.8
Ga
0.2
N
1252.7
644.3
In
0.5
Ga
0.5
N
758.1
459.4
In
0.2
Ga
0.8
N
684.2
389.4
GaN
1460.7
295