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International Journal of Photoenergy
Volume 2015, Article ID 626201, 6 pages
Research Article

Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received 2 October 2014; Revised 17 December 2014; Accepted 6 January 2015

Academic Editor: Wayne A. Anderson

Copyright © 2015 Lifei Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Graphene-silicon (Gr-Si) Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si) interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance), we point out that this phenomenon is caused by the natural doping effect of the Gr film.