Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

Figure 5

AFM images of the Gr film on Si substrate: (a) before annealing; (b) after thermal annealing at 400°C. The height profile of the Gr films along the white line starting from where the Gr film is partly broken (point 1): (c) before annealing; (d) after annealing at 400°C. The root-mean-square (rms) surface roughness is acquired on a scan window highlighted by the red box. The arrows in the AFM images show the corrugation of the Gr film. The scale bars represent 1 μm.

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