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International Journal of Photoenergy
Volume 2015 (2015), Article ID 703045, 7 pages
Research Article

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

1Department of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, Taiwan
2Department of Materials Science and Engineering, National Chung Hsing University, 250 KuoKuang Road, Taichung 402, Taiwan
3High Concentration Photovoltaic Project, Institute of Nuclear Energy Research, 4th Floor, No. 90, Luke 5th Road, Lujhu District, Kaohsiung 821, Taiwan

Received 9 December 2014; Revised 29 January 2015; Accepted 29 January 2015

Academic Editor: Shyh-Jer Huang

Copyright © 2015 Tsung-Shine Ko et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.