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International Journal of Photoenergy
Volume 2015 (2015), Article ID 750846, 7 pages
Research Article

Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4 Thin Film Solar Cells

1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440746, Republic of Korea
2Department of Information Display, Sun Moon University, Asan 336708, Republic of Korea
3School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440746, Republic of Korea

Received 2 July 2015; Revised 21 September 2015; Accepted 21 October 2015

Academic Editor: Thomas Unold

Copyright © 2015 Arun Khalkar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report herein Cu2ZnSnS4 (CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2 environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure sulfurization is drastically improved, to an efficiency of 6.75% with atmospheric pressure sulfurization.