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International Journal of Photoenergy
Volume 2015, Article ID 760376, 6 pages
http://dx.doi.org/10.1155/2015/760376
Research Article

Optical Properties of Indium Doeped ZnO Nanowires

1Department of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, Taiwan
2Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
3Department of Computer and Communication, SHU-TE University, Kaohsiung 824, Taiwan

Received 17 December 2014; Revised 9 February 2015; Accepted 10 February 2015

Academic Editor: Shyh-Jer Huang

Copyright © 2015 Tsung-Shine Ko et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We report the synthesis of the ZnO nanowires (NWs) with different indium concentrations by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of the ZnO NWs. High resolution transmission electron microscopy confirms that the ZnO NWs growth relied on vapor-liquid-solid mechanism and energy dispersion spectrum detects the atomic percentages of indium in ZnO NWs. Scanning electron microscopy shows that the diameters of pure ZnO NWs range from 20 to 30 nm and the diameters of ZnO:In were increased to 50–80 nm with increasing indium doping level. X-ray diffraction results point out that the crystal quality of the ZnO NWs was worse with doping higher indium concentration. Photoluminescence (PL) study of the ZnO NWs exhibited main photoemission at 380 nm due to the recombination of excitons in near-band-edge (NBE). In addition, PL results also indicate the slightly blue shift and PL intensity decreasing of NBE emission from the ZnO NWs with higher indium concentrations could be attributed to more donor-induced trap center generations.