Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization
Cross-sectional TEM images and EDX maps for a sample with an AZO underlayer: (a, b) before and (c, d) after annealing (500°C, 5 h), indicating that layer exchange occurred. (e) Magnified TEM image of the sample after annealing.
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