International Journal of Photoenergy / 2016 / Article / Tab 2

Research Article

Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

Table 2

Summary of the electrical properties of GZO films prepared at 400°C on various ZnO buffer layer thickness.

SamplesResistivity (Ω cm)Mobility (cm2 V−1 s−1)Bulk concentration (cm−3)

GZO (800 nm)/ZnO (30 nm)16.25
GZO (800 nm)/ZnO (212 nm)16.10
GZO (800 nm)/ZnO (422 nm)16.30
GZO (800 nm)/ZnO (652 nm)16.35
GZO (800 nm)/ZnO (766 nm)16.45

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