Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

Figure 4

- characteristics of MJ Si-SC under light illumination: (a) (1)—initial curve, (2)—with DLC coating (compensated technique); (b) - curves obtained by loaded technique with respect to the treatments: (1)—initial; (2)—after H⁺ plasma etching for 5 min; (3)—(2) + Ar⁺ + H⁺; and (4)—(3) + DLCF sputtering. Inset: - curves (treatment is (4)) obtained by pulsed flash light assisted loaded technique. Conditions of illumination: = 100 mW/сm² (АМ1.5) and pulse = 10000 mW/сm² (100АМ1.5), = 6 cm².

(a)

(b)