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International Journal of Photoenergy
Volume 2016 (2016), Article ID 2152018, 9 pages
Research Article

Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D

1Université de Yaoundé I, Faculté des Sciences, Département de Physique, BP 812, Yaoundé, Cameroon
2Centre d’Excellence Africain en Technologies de l’Information et de la Communication (CETIC), Université de Yaoundé I, BP 8390, Yaoundé, Cameroon
3Laboratoire des Matériaux et Environnement (LA.M.E), UFR-SEA, Université de Ouagadougou, 03 BP 7021, Ouaga 03, Burkina Faso

Received 1 November 2015; Revised 16 February 2016; Accepted 7 April 2016

Academic Editor: Mahmoud M. El-Nahass

Copyright © 2016 M. Djinkwi Wanda et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper reports numerical investigation, using SCAPS-1D program, of the influence of Cu2ZnSnS4 (the so-called CZTS) material features such as thickness, holes, and defects densities on the performances of ZnO:Al/i-ZnO/CdS/CZTS/Mo solar cells structure. We found that the electrical parameters are seriously affected, when the absorber thickness is lower than 600 nm, mainly due to recombination at CZTS/Molybdenum interface that causes the short-circuit current density loss of 3.6 mA/cm2. An additional source of recombination, inside the absorber layer, affects the short-circuit current density and produces a loss of about 2.1 mA/cm2 above this range of absorber thickness. The characteristic shows that the performance of the device is also limited by a double diode behavior. This effect is reduced when the absorber layer is skinny. Our investigations showed that, for solar cells having a CZTS absorber layer of thin thickness and high-quality materials (defects density ~1015 cm−3), doping less than 1016 cm−3 is especially beneficial. Such CZTS based solar cell devices could lead to conversion efficiencies higher than 15% and to improvement of about 100 mV on the open-circuit voltage value. Our results are in conformity with experimental reports existing in the literature.