Research Article

Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D

Table 1

Baseline parameters for modeling CZTS solar cells [9, 13, 14].

General device properties
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(cm/s)107105
(cm/s)105107

Layer properties
CZTSCdSZnO-IZnO:Al

(nm)Variable10080450
(eV)1.452.43.33.3
(eV)4.14.2154.44.4
7.010.09.09.0
(cm−3)2.2 × 10182.2 × 10182.2 × 10182.2 × 1018
(cm−3)1.8 × 10199.1 × 10181.8 × 10191.8 × 1019
(cm/s)1 × 1071 × 1071 × 1071 × 107
(cm/s)1 × 1071 × 1071 × 1071 × 107
(cm2/Vs)6 × 1011 × 1021 × 1021 × 102
(cm2/Vs)2 × 1012.5 × 1012.5 × 1012.5 × 101
Doping (cm−3)Variable (a)1 × 1018 (d)1 × 1018 (d)1 × 1020 (d)

Bulk defect properties
(cm−3)Variable (A)6 × 1016 (D)1 × 1016 (D)1 × 1016 (D)
(cm2)1.3 × 10−121 × 10−121 × 10−151 × 10−15
(cm2)1.5 × 10−151 × 10−151 × 10−121 × 10−12

Interface properties
CZTS/CdS

(eV)−0.115
(cm−2)1011 (n)
(cm2)10−15
(cm2)10−15

(a) and (d) denote shallow acceptor and donor defects while (A) and (D) denote deep acceptor and donor defects and (n) denotes neutral defects.