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International Journal of Photoenergy
Volume 2016, Article ID 3095758, 7 pages
http://dx.doi.org/10.1155/2016/3095758
Research Article

Study of Transition Region of p-Type SiO:H as Window Layer in a-Si:H/a-SiGe:H Multijunction Solar Cells

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Received 27 May 2016; Revised 3 July 2016; Accepted 10 July 2016

Academic Editor: Yi Zhang

Copyright © 2016 Pei-Ling Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Pei-Ling Chen, Po-Wei Chen, and Chuang-Chuang Tsai, “Study of Transition Region of p-Type SiO:H as Window Layer in a-Si:H/a-SiGe:H Multijunction Solar Cells,” International Journal of Photoenergy, vol. 2016, Article ID 3095758, 7 pages, 2016. https://doi.org/10.1155/2016/3095758.