Study of Transition Region of p-Type SiO<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-4.34426pt" id="M1" height="5.77417pt" version="1.1" viewBox="-0.0657574 -1.42991 7.64947 5.77417" width="7.64947pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><path id="g50-121" d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z"/></g></svg>:H as Window Layer in a-Si:H/a-Si<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-7.29828pt" id="M2" height="10.8864pt" version="1.1" viewBox="-0.0657574 -3.58812 21.1051 10.8864" width="21.1051pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><path id="g50-50" d="M389 0V32C297 38 291 46 291 118V635C234 613 175 595 109 583V556L161 554C203 552 207 547 207 497V118C207 46 201 38 110 32V0H389Z"/></g><g transform="matrix(.012,0,0,-0.012,5.85,4.134)"><path id="g54-33" d="M556 236V289H56V236H556Z"/></g><g transform="matrix(.012,0,0,-0.012,13.189,4.134)"><path id="g50-122" d="M563 395C563 428 543 451 519 451C500 451 480 438 472 423C468 415 465 403 470 394C477 381 482 368 482 347C482 272 386 136 342 74H340C334 163 323 257 312 337C302 410 290 451 257 451C214 451 160 385 127 338L145 310C169 341 203 373 209 373C219 373 225 369 232 325C249 215 269 62 271 -15C220 -80 135 -165 18 -231L26 -257L142 -230C254 -105 279 -74 342 13C394 85 484 211 526 286C553 334 563 365 563 395Z"/></g></svg>Ge<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-7.29823pt" id="M3" height="8.72814pt" version="1.1" viewBox="-0.0657574 -1.42991 7.86649 8.72814" width="7.86649pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><use xlink:href="#g50-122"/></g></svg>:H Multijunction Solar Cells

<div>Effect of <svg height="13.9182pt" id="M223" style="vertical-align:-5.2823pt" version="1.1" viewbox="-0.0498162 -8.6359 19.5325 13.9182" width="19.5325pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.086,3.132)"><path d="M738 650H471V617C551 612 559 606 559 524V368H218V524C218 606 227 612 305 617V650H38V617C123 612 131 606 131 524V126C131 44 124 38 41 33V0H310V33C226 38 218 44 218 126V321H559V126C559 44 551 38 463 33V0H737V33C654 38 646 44 646 126V524C646 606 654 612 738 617V650Z" id="g58-70"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="777" vert-adv-y="777"></glyph.data></g><g transform="matrix(.0065,0,0,-0.0065,15.157,5.233)"><path d="M452 139L416 148C386 81 373 77 319 77H141L282 220C372 312 414 373 414 464C414 569 332 635 240 635C181 635 132 609 101 574L42 493L70 467C98 506 143 562 209 562C280 562 324 515 324 435C324 347 261 272 197 197C148 139 89 84 34 29V0H417L452 139Z" id="g176-51"></path><glyph.data ascent="3439" descent="-2858" horiz-adv-x="494" vert-adv-y="494"></glyph.data></g></svg> on series resistance and shunt resistance of a-Si:H single-junction solar cells.</div>

International Journal of Photoenergy

fig7

Figure 7

Figure 7: Study of Transition Region of p-Type SiO<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-4.34426pt" id="M1" height="5.77417pt" version="1.1" viewBox="-0.0657574 -1.42991 7.64947 5.77417" width="7.64947pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><path id="g50-121" d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z"/></g></svg>:H as Window Layer in a-Si:H/a-Si<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-7.29828pt" id="M2" height="10.8864pt" version="1.1" viewBox="-0.0657574 -3.58812 21.1051 10.8864" width="21.1051pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><path id="g50-50" d="M389 0V32C297 38 291 46 291 118V635C234 613 175 595 109 583V556L161 554C203 552 207 547 207 497V118C207 46 201 38 110 32V0H389Z"/></g><g transform="matrix(.012,0,0,-0.012,5.85,4.134)"><path id="g54-33" d="M556 236V289H56V236H556Z"/></g><g transform="matrix(.012,0,0,-0.012,13.189,4.134)"><path id="g50-122" d="M563 395C563 428 543 451 519 451C500 451 480 438 472 423C468 415 465 403 470 394C477 381 482 368 482 347C482 272 386 136 342 74H340C334 163 323 257 312 337C302 410 290 451 257 451C214 451 160 385 127 338L145 310C169 341 203 373 209 373C219 373 225 369 232 325C249 215 269 62 271 -15C220 -80 135 -165 18 -231L26 -257L142 -230C254 -105 279 -74 342 13C394 85 484 211 526 286C553 334 563 365 563 395Z"/></g></svg>Ge<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-7.29823pt" id="M3" height="8.72814pt" version="1.1" viewBox="-0.0657574 -1.42991 7.86649 8.72814" width="7.86649pt"><g transform="matrix(.012,0,0,-0.012,0,4.134)"><use xlink:href="#g50-122"/></g></svg>:H Multijunction Solar Cells 

International Journal of Photoenergy

Study of Transition Region of p-Type SiO:H as Window Layer in a-Si:H/a-SiGe:H Multijunction Solar Cells

Figure 7