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International Journal of Photoenergy
Volume 2016, Article ID 3129896, 5 pages
Research Article

Aluminum-Doped SnO2 Hollow Microspheres as Photoanode Materials for Dye-Sensitized Solar Cells

Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronic, Henan University, Kaifeng 475001, China

Received 21 March 2016; Revised 5 May 2016; Accepted 17 May 2016

Academic Editor: Germà Garcia-Belmonte

Copyright © 2016 Binghua Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Al doped SnO2 microspheres were prepared through hydrothermal method. As-prepared SnO2 microspheres were applied as photoanode materials in dye-sensitized solar cells (DSCs). The properties of the assembled DSCs were significantly improved, especially the open-circuit voltage. The reason for the enhancement was explored through the investigation of dark current curves and electrochemistry impedance spectra. These results showed that the Al doping significantly increased the reaction resistance of recombination reactions and restrained the dark current. The efficient lifetime of photoexcited electrons was also obviously lengthened.