International Journal of Photoenergy / 2016 / Article / Fig 5

Research Article

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Figure 5

Thermionic field emission (TFE) fits obtained by fitting (6) to the temperature dependence values of experimental ideality factors calculated for different values of the characteristic energy , without considering the bias coefficient of the barrier height, , for Al/poly(4-vinyl phenol)/p-GaAs structure. The filled circles show the temperature dependence values of experimental ideality factor obtained from the I-V characteristics.

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