International Journal of Photoenergy / 2016 / Article / Tab 1

Research Article

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Table 1

The , , , and values for the investigated device structure of Figure 1.

(K) (A) (eV)

8011.561.83 × 10−060.147
11010.873.34 × 10−060.203
1408.764.29 × 10−060.262
1706.545.90 × 10−060.319
2005.326.59 × 10−060.379
2304.127.28 × 10−060.439
2603.438.29 × 10−060.499
2903.239.73 × 10−060.558
3203.131.17 × 10−050.616

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