Research Article
Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method
Table 1
The
,
,
, and
values for the investigated device structure of Figure
1.
| | (K) | | (A) | (eV) |
| | 80 | 11.56 | 1.83 × 10−06 | 0.147 | | 110 | 10.87 | 3.34 × 10−06 | 0.203 | | 140 | 8.76 | 4.29 × 10−06 | 0.262 | | 170 | 6.54 | 5.90 × 10−06 | 0.319 | | 200 | 5.32 | 6.59 × 10−06 | 0.379 | | 230 | 4.12 | 7.28 × 10−06 | 0.439 | | 260 | 3.43 | 8.29 × 10−06 | 0.499 | | 290 | 3.23 | 9.73 × 10−06 | 0.558 | | 320 | 3.13 | 1.17 × 10−05 | 0.616 |
|
|
