Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2016 (2016), Article ID 7218310, 5 pages
http://dx.doi.org/10.1155/2016/7218310
Research Article

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

1Institute of Materials Science and Engineering, National Central University, Taoyuan, Taiwan
2Institute of Nuclear Energy Research, Taoyuan, Taiwan
3Optical Science Center, National Central University, Taoyuan, Taiwan
4Department of Optics and Photonics, National Central University, Taoyuan, Taiwan

Received 20 April 2016; Revised 27 July 2016; Accepted 17 August 2016

Academic Editor: Bhushan Sopori

Copyright © 2016 Wei-Cheng Kuo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wei-Cheng Kuo, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, and Jenq-Yang Chang, “High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer,” International Journal of Photoenergy, vol. 2016, Article ID 7218310, 5 pages, 2016. doi:10.1155/2016/7218310