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International Journal of Photoenergy
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International Journal of Photoenergy
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2016
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Article
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Fig 4
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Research Article
High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer
Figure 4
(a) High resolution cross-sectional TEM image of the Ge films annealing at 700°C; (b) Ge/Si interface.
(a)
(b)