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International Journal of Photoenergy
Volume 2016 (2016), Article ID 8029608, 9 pages
Research Article

Evaluation of Shunt Losses in Industrial Silicon Solar Cells

Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

Received 11 April 2016; Accepted 6 June 2016

Academic Editor: Simona Binetti

Copyright © 2016 P. Somasundaran and R. Gupta. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Shunting is one of the key issues in industrial silicon solar cells which degrade cell performance. This paper presents an approach for investigation of the performance degradation caused by the presence of ohmic extended shunts at various locations in industrial silicon solar cells. Location, nature, and area of the shunts existing in solar cells have been examined by lock-in infrared thermography (LIT). Based on LIT images and experimental dark I-V curves of solar cell, shunted cell has been modeled, from which loss in fill factor and efficiency due to the specific shunt has been obtained. Distributed diode modeling approach of solar cell has been exploited for obtaining simulation results which were supported by experimental measurements. The presented approach is useful to estimate performance reduction due to specific shunts and to quantify losses, which can help in improving the efficiency of solar cell during production by tackling the shunt related problems based on the level of severity and tolerance.