Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

<div>Melting sequences of silicon feedstock for DS processes with different crucible thermal conductivities: (a1)–(a3) 2 W/m⋅K; (b1)–(b3) 6 W/m⋅K. (a1) and (b1): 500 min; (a2) and (b2): 560 min; (a3) and (b3): 700 min.</div>

International Journal of Photoenergy

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Figure 3

Figure 3: Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots 