Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Figure 5

Temperature distribution (left, 2 K between isotherms), velocity vector, and melt-crystal interface (right) in the silicon domain under 50% solidification for DS processes with different crucible thermal conductivities: (a) 2 W/m⋅K; (b) 6 W/m⋅K. is the temperature difference along the axis in crystal domain.

(a)

(b)