Research Article
Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots
Figure 7
Temperature distribution in the silicon ingots at the end of annealing (left, 1 K between isotherms) and during cooling (right, 2 K between isotherms) for DS processes with different crucible thermal conductivities: (a) 2 W/m⋅K; (b) 6 W/m⋅K.
| (a) |
| (b) |