Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Figure 11

Simulated (a) efficiency, (b) short circuit current, and open circuit voltage using PC1D with DADiS as a function of BSG boron concentration. The evaluated BSG boron concentration range is lower than 4 × 10²¹ cm⁻³ and no BRL is formed. The maximum point in efficiency is observed at around 3 × 10²¹ cm⁻³.

(a)

(b)