Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

<div>BSG boron concentration measured by SIMS as a function of flow ratio of B<sub>2</sub>H<sub>6</sub> to SiH<sub>4</sub>. The inset graph shows the boron concentration profile in BSG measured by SIMS as an example. The BSG boron concentration can be varied by changing the gas flow ratio of B<sub>2</sub>H<sub>6</sub> to SiH<sub>4</sub>.</div>

International Journal of Photoenergy

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Figure 3

Figure 3: Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application 

Figure 3 | Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application 