Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Figure 7

Carrier lifetimes as a function of diffusion temperature. The lifetimes of low BSG boron concentration decrease with diffusion temperature but almost the same as that of USG deposited samples. The lifetimes of samples with BRL are higher than that of the initial silicon wafer.