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International Journal of Photoenergy
Volume 2016, Article ID 8183673, 8 pages
http://dx.doi.org/10.1155/2016/8183673
Research Article

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

1D&S Inc., Tokyo 193-0834, Japan
2AMAYA Co., Ltd., Saitama 343-0822, Japan

Received 9 April 2016; Accepted 7 June 2016

Academic Editor: Prakash Basnyat

Copyright © 2016 Ikuo Kurachi and Kentaro Yoshioka. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Y. Wan, C. Samundsett, T. Kho et al., “Towards industrial advanced front-junction n-type silicon solar cells,” in Proceedings of the 40th IEEE Photovoltaic Specialist Conference (PVSC ’14), pp. 862–865, Denver, Colo, USA, June 2014. View at Publisher · View at Google Scholar · View at Scopus
  2. J. Benick, B. Steinhauser, R. Muller et al., “High efficiency n-type PERT and PERL solar cells,” in Proceedings of the 40th IEEE Photovoltaic Specialist Conference (PVSC ’14), pp. 3637–3640, Denver, Colo, USA, June 2014. View at Publisher · View at Google Scholar · View at Scopus
  3. J. Schmidt, A. G. Aberle, and R. Hezel, “Investigation of carrier lifetime instabilities in CZ-grown silicon,” in Proceedings of the 26th IEEE Photovoltaic Specialists Conference (PVSC ’97), pp. 13–18, Anaheim, Calif, USA, October 1997. View at Publisher · View at Google Scholar
  4. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, “Minority carrier lifetime degradation in boron-doped Czochralski silicon,” Journal of Applied Physics, vol. 90, no. 5, pp. 2397–2404, 2001. View at Publisher · View at Google Scholar · View at Scopus
  5. P. Basnyat, B. Sopori, S. Devayajanam et al., “Experimental study to separate surface and bulk contributions of light-induced degradation in crystalline silicon solar cells,” Emerging Materials Research, vol. 4, no. 2, pp. 239–246, 2015. View at Publisher · View at Google Scholar
  6. D. Macdonald and L. J. Geerligs, “Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon,” Applied Physics Letters, vol. 85, no. 18, pp. 4061–4063, 2004. View at Publisher · View at Google Scholar · View at Scopus
  7. M. A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N.-P. Harder, “Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes,” in Proceedings of the 34th IEEE Photovoltaic Specialists Conference (PVSC ’09), pp. 1556–1561, IEEE, Philadelphia, Pa, USA, June 2009. View at Publisher · View at Google Scholar · View at Scopus
  8. F. Kiefer, C. Ulzhöfer, T. Brendemühl et al., “High efficiency n-type emitter-wrap-through silicon solar cells,” IEEE Journal of Photovoltaics, vol. 1, no. 1, pp. 49–53, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. D. L. Meier, V. Chandrasekaran, H. P. Davis et al., “N-type, ion-implanted silicon solar cells and modules,” IEEE Journal of Photovoltaics, vol. 1, no. 2, pp. 123–129, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. K. M. Whittle and G. L. Vick, “Control of boron diffusion from a pyrolitic borosilicate glass sourc,” Journal of the Electrochemical Society, vol. 116, no. 5, pp. 645–648, 1969. View at Publisher · View at Google Scholar · View at Scopus
  11. B. Bazer-Bachi, C. Oliver, B. Semmache et al., “Co-diffusion from boron doped oxide and POCl3,” in Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, pp. 1155–1159, Hamburg, Germany, 2011.
  12. K. O. Davis, Atmospheric pressure chemical vapor deposition of functional oxide materials for crystalline silicon solar cells [Ph.D. thesis], University of Central Florida, Orlando, Fla, USA, 2015.
  13. http://www.amaya-cvd.co.jp/en/prod/amax1000s.html.
  14. P. Rothhardt, T. Stoffels, R. Keding, U. Belledin, A. Wolf, and D. Biro, “Control of phosphorus doping for co-diffusion processes,” in Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, pp. 1917–1920, Frankfurt, Germany, 2012.
  15. P. Rothhardt, S. Meier, S. Maier, K. Jiang, A. Wolf, and D. Biro, “Characterization of POCl3-based codiffusion processes for bifacial N-type solar cells,” IEEE Journal of Photovoltaics, vol. 4, no. 3, pp. 827–833, 2014. View at Publisher · View at Google Scholar · View at Scopus
  16. S. P. Phang and D. Macdonald, “Effect of boron codoping and phosphorus concentration on phosphorus diffusion gettering,” IEEE Journal of Photovoltaics, vol. 4, no. 1, pp. 64–69, 2014. View at Publisher · View at Google Scholar · View at Scopus
  17. I. Kurachi and K. Yoshioka, “Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film,” Japanese Journal of Applied Physics, vol. 54, no. 9, Article ID 096502, 2015. View at Publisher · View at Google Scholar · View at Scopus
  18. I. Kurachi and K. Yoshioka, “Investigation of boron solid-phase diffusion from BSG film deposited by AP-CVD for solar cell application,” in Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, pp. 1873–1876, Frankfurt, Germany, 2012.
  19. I. Kurachi and K. Yoshioka, “Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film,” Japanese Journal of Applied Physics, vol. 53, no. 3, Article ID 036504, 2014. View at Publisher · View at Google Scholar · View at Scopus
  20. P. J. Cousins and J. E. Cotter, “The influence of diffusion-induced dislocations on high efficiency silicon solar cells,” IEEE Transactions on Electron Devices, vol. 53, no. 3, pp. 457–464, 2006. View at Publisher · View at Google Scholar · View at Scopus
  21. S. P. Phang, W. Liang, B. Wolpensinger, M. A. Kessler, and D. Macdonald, “Tradeoffs between impurity gettering, bulk degradation, and surface passivation of boron-rich layers on silicon solar cells,” IEEE Journal of Photovoltaics, vol. 3, no. 1, pp. 261–266, 2013. View at Publisher · View at Google Scholar · View at Scopus
  22. M. Miyake, “Diffusion of boron into silicon from borosilicate glass using rapid thermal processing,” Journal of the Electrochemical Society, vol. 138, no. 10, pp. 3031–3039, 1991. View at Publisher · View at Google Scholar · View at Scopus
  23. I. Kurachi and K. Yoshioka, “An accurate analytical model of boron diffusion from AP-CVD BSG for solar cell process optimization,” in Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, pp. 1085–1089, Paris, France, 2013.
  24. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, NY, USA, 2nd edition, 1981.
  25. S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces,” IEEE Transactions on Electron Devices, vol. 27, no. 8, pp. 1497–1508, 1980. View at Publisher · View at Google Scholar · View at Scopus
  26. I. Kurachi and K. Yoshioka, “Boron diffusion profile estimation using measured sheet resistance for T-CAD solar cell simulation,” in Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp. 855–858, Amsterdam, The Netherlands, 2014.
  27. A. Harada, K. Nakamura, I. Kurachi, K. Yoshioka, N. Ikeno, and A. Ogura, “Emitter layer design by thermal diffusion process for N-type crystalline silicon solar cells,” in Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp. 900–903, Amsterdam, The Netherlands, 2014.
  28. D. A. Clugston and P. A. Basore, “PC1D version 5: 32-bit solar cell modeling on personal computers,” in Proceedings of the 26th IEEE Photovoltaic Specialists Conference, pp. 207–210, IEEE, Anaheim, Calif, USA, October 1997. View at Scopus