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International Journal of Photoenergy
Volume 2017, Article ID 3192197, 7 pages
Research Article

Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5%

1Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China
2School of Textiles and Materials, Xi’an Polytechnic University, Xi’an 710048, China

Correspondence should be addressed to Hui Guo; nc.ude.naidix.liam@iuhoug and Chunfu Zhang; nc.ude.naidix@gnahzfc

Received 15 February 2017; Accepted 13 April 2017; Published 13 June 2017

Academic Editor: Pushpa Pudasaini

Copyright © 2017 Chenxu Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A systematical investigation was carried out into the effects of the hole-transporting layer treatment of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on the performance of planar hybrid n-Si/PEDOT:PSS solar cells. Triton X-100 and ethylene glycol (EG) were chosen to improve the conductivity and surface morphology of the PEDOT:PSS film. It was found that the annealing temperature has a great influence on the PEDOT:PSS material properties and the corresponding device performance. By optimizing the annealing temperature, the conductivity of the PEDOT:PSS film doped with Triton X-100 and EG could be enhanced by a factor of more than three orders. And the corresponding device also shows record power conversion efficiency as high as 14.5% with an open circuit voltage of 0.627 V, a short circuit current of 32.6 mA/cm2, and a fill factor of 70.7%.