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International Journal of Photoenergy
Volume 2017, Article ID 3192197, 7 pages
https://doi.org/10.1155/2017/3192197
Research Article

Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5%

1Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China
2School of Textiles and Materials, Xi’an Polytechnic University, Xi’an 710048, China

Correspondence should be addressed to Hui Guo; nc.ude.naidix.liam@iuhoug and Chunfu Zhang; nc.ude.naidix@gnahzfc

Received 15 February 2017; Accepted 13 April 2017; Published 13 June 2017

Academic Editor: Pushpa Pudasaini

Copyright © 2017 Chenxu Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chenxu Zhang, Yuming Zhang, Hui Guo, Zeyulin Zhang, and Chunfu Zhang, “Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5%,” International Journal of Photoenergy, vol. 2017, Article ID 3192197, 7 pages, 2017. https://doi.org/10.1155/2017/3192197.