Research Article
Influence of Front and Back Contacts on Photovoltaic Performances of p-n Homojunction Si Solar Cell: Considering an Electron-Blocking Layer
Table 4
Different layers of electronic properties used in the APMS simulation.
| Electronic properties | EBL | p-Si | n-Si |
| Relative permittivity, ɛr | 11.9 | 11.9 | 11.9 | Electron mobility, μn (cm2/v-s) | 40.0 | 20.0 | 20.0 | Hole mobility, μp (cm2/v-s) | 4.0 | 2.0 | 2.0 | Acceptor & donor concentration (cm−3) | NA = 1.0 × 1018 | NA = 1.0 × 1018 | ND = 1.0 × 1018 | Bandgap (eV) | 2.10 | 1.82 | 1.82 | Effective density of states in the conduction band (cm−3) | 2.5 × 1020 | 2.5 × 1020 | 2.5 × 1020 | Effective density of states in the valence band (cm−3) | 2.5 × 1020 | 2.5 × 1020 | 2.5 × 1020 | Electron affinity (eV) | 3.85 | 3.80 | 3.80 |
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