Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Table 1

Simulation parameters.

Parameters
(i) Unit cell dimensions
Cell thickness	180 μm
Half width in x direction	550–1050 μm
Width in y direction	100 μm
(ii) Front surface
Boundary type	Conductive
Sheet resistance	120–140 Ω/□ [13, 16, 24, 37]
Doping type	n-type
JoFront	1.00E−13 A/cm^2 [16, 35, 36]
(iii) Bulk
Doping type	n-type
Resistivity	3 Ω·cm
Lifetime	3000 μs
(iv) Rear (emitter/BSF)
(a) Emitter
Contact opening: contact shape	Line/circle
Half width in x direction	4–40 μm
Contact pitch in x direction	200 μm
Number of contacts	4
Metal width (shown in Figure 1)	Same as emitter width
Contact position	Aligned
Emitter: shape	Line
Half width	400–800 μm [5, 13, 33, 34]
Sheet resistance	60–80 Ω/□ [13, 16, 24, 37]
Contacted region: Jo	6E−13 A/cm^2 [16, 35, 36]
Contact resistivity	1E−4 Ω·cm^2
Noncontacted region: Jo	2.7E−14 A/cm^2 [16, 35, 36]
(b) Gap
Non-contacted region: Jo	1E−14 A/cm^2
(c) BSF
Contact opening: contact shape	Line/circle (centrally located)
Half width in x direction	4–40 μm
Contact pitch in x direction	100 μm
Number of contacts	1
Metal width (shown in Figure 1)	Same as BSF width
Contact position	Centrally located
BSF: shape	Line
Half width	100–200 μm [5, 13, 33, 34]
Sheet resistance	30–50 Ω/□ [13, 16, 24, 37]
Contacted region: Jo	3.15E−13 A/cm^2 [16, 35, 36]
Contact resistivity	1E−4 Ω·cm^2
Noncontacted region: Jo	5E−14 A/cm^2 [16, 35, 36]