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International Journal of Photoenergy
Volume 2017 (2017), Article ID 9503857, 6 pages
Research Article

Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsin-Chu 30010, Taiwan

Correspondence should be addressed to Edward Yi Chang

Received 6 June 2017; Revised 6 August 2017; Accepted 7 September 2017; Published 8 October 2017

Academic Editor: Giulia Grancini

Copyright © 2017 Shun Sing Liao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780°C, a growth time of 5 min, and with N2/O2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750°C, growth time of 20 min, and under pure N2 gas environment. Carrier lifetime was increased to 15.45 μs, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.