Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

<div>Carrier lifetime maps with respect to time: (a) sample A (without thermal oxidation) average carrier lifetime was 5.5 <i>μ</i>s and (b) sample B (with thermal oxidation) average carrier lifetime was 21 <i>μ</i>s.</div>

International Journal of Photoenergy

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Figure 4

Figure 4: Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer 