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International Journal of Photoenergy
Volume 2018 (2018), Article ID 7215843, 10 pages
https://doi.org/10.1155/2018/7215843
Research Article

Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

1Department of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
2Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
3Istituto di Elettronica e di Ingegneria dell’Informazione e delle Telecomunicazioni (IEIIT), Consiglio Nazionale delle Ricerche (CNR), Corso Duca degli Abruzzi 24, 10129 Torino, Italy

Correspondence should be addressed to F. Cappelluti; ti.otilop@itulleppac.aciredef

Received 9 June 2017; Accepted 23 November 2017; Published 18 February 2018

Academic Editor: Urs Aeberhard

Copyright © 2018 A. P. Cédola et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. P. Cédola, D. Kim, A. Tibaldi, et al., “Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells,” International Journal of Photoenergy, vol. 2018, Article ID 7215843, 10 pages, 2018. doi:10.1155/2018/7215843