Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Figure 4

(a) Comparison between measured and simulated EQE. (b) Zoom in the QD wavelength region. The black dashed lines show the predicted decrease of EQE according in the doped (14 e/dot) QD solar cell assuming the same minority carrier lifetime as in the undoped sample and under different hypotheses of dopant impurity distribution: well confined in the QD region (direct), uniformly distributed across the QD stack, and located at the center of the GaAs interdot layers. Symbols show experimental data. Solid lines inidicate simulation and best fit.

(a)

(b)