Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Figure 6

Analysis of V_oc penalty in QDSC as a function of the per dot doping density, for different GS energy confinement (λ_GS ranges from 990 nm to 1050 nm) and different minority carrier lifetime in the interdot layers (τ_nr,QD). The black dash-dot line indicates the V_oc of the reference bulk GaAs cell. The red bullet indicates experimental data in this work. The black bullet indicates experimental data from Lam et al. [43].