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International Journal of Photoenergy
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International Journal of Photoenergy
/
2018
/
Article
/
Tab 1
/
Research Article
Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells
Table 1
Photovoltaic parameters extracted from the measured
J
−
V
characteristics in Figure
3
.
Device
J
sc
, mA/cm
2
V
oc
, V
FF, %
R2, REF GaAs cell
13.37
0.942
59.7
R3, undoped QD
14.42
0.778
62.7
R4, doped QD
11.74
0.894
61.1
R5, doped QD
12.70
0.868
63.1