H₂O/O₂ Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells

Table 2

The calculated ratio of silicon oxide subpeaks and total ratio of SiO_x after annealing of AlO_x film in various ambients for 15 or 120 min; criteria are based on Si peak.

Time	Annealing condition	Si^+-O (%)	Si^2+-O (%)	Si^3+-O (%)	Si^4+-O (%)	SiOx () (%)
15 min	H2O/O2	18.35	11.18	5.19	56.70	61.89
	O2	10.69	2.63	1.00	31.15	32.15
	Air	10.78	3.28	0.55	33.52	34.07
120 min	H2O/O2	30.45	5.37	8.74	68.59	77.33
	O2	18.82	11.64	2.69	46.14	48.83
	Air	17.18	13.67	3.97	54.28	58.25