Research Article

Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

Table 3

Parameters in the current density equation (Equation (2)) are derived from the minority carrier diffusion equation.

ParametersDescriptionValue

Quantity of electric charge C
Emitter thickness0.1 μm
Base thickness2.97 μm
Space charge zone thickness0.03 μm
Emission zone minority carrier diffusion coefficient6.63 cm2/s
Base zone minority carrier diffusion coefficient1.93 cm2/s
Front surface recombination rate cm/s
Back surface recombination rate cm/s
Minority carrier lifetime38 ns
Emission zone minority carrier diffusion length, 4.17 μm
Base zone minority carrier diffusion length, 7.72 μm
Simplified front surface recombination rate, 2.16
Simplified back surface recombination rate, 4.66