Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

Table 4

The defect concentration and minority carrier lifetime before and after annealing and the annealing rate and the proportion of irrecoverable defects.

Fluence (1/cm^2)	(1/cm^3)		(ns)		(1/s)	(%)
	Before annealing	After annealing	Before annealing	After annealing
			4.49	17.45		6.30
			1.42	3.02		35.94
			1.11	2.50		33.22
			1.04	2.07		40.17
			0.06	0.12		45.58