Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

<div>The surface morphology of ITiO films of different doping concentrations from Ti-0.5 wt% to Ti-5.0 wt%.</div>

International Journal of Photoenergy

fig3

Figure 3

Figure 3: Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 

Figure 3 | Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 